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 TO-220F 5A High sensitive Thyristor
TF541S-A,TF561S-A
s Features
qRepetitive peak off-state voltage: VDRM=400, 600V qAverage on-state current: IT(AV)=5A qHigh sensitive Gate trigger current: IGT=0.2mA max qIsolation voltage: VISO=1500V(50Hz Sine wave, RMS)
13.0 min
External Dimensions
(Unit: mm)
3.30.2 16.90.3 8.40.2 4.00.2 10.00.2
4.20.2 C 0.5 2.8
3.90.2 0.80.2
a b
1.350.15 1.350.15 +0.2 0.85 -0.1 +0.2 0.45 -0.1 2.40.2
a. Part Number b. Lot Number
2.54 2.20.2
2.54
(1). Cathode (K) (2). Anode (A) (3). Gate (G)
(1) (2) (3)
Weight: Approx. 2.1g
sAbsolute Maximum Ratings
Parameter
Repetitive peak off-state voltage Repetitive peak reverse voltage Non-repetitive peak off-state voltage Non-repetitive peak reverse voltage Average on-state current RMS on-state current Surge on-state current Peak forward gate current Peak forward gate voltage Peak reverse gate voltage Peak gate power loss Average gate power loss Junction temperature Storage temperature Isolation voltage
Symbol
VDRM VRRM VDSM VRSM IT(AV) IT(RMS) ITSM IFGM VFGM VRGM PGM PG(AV) Tj Tstg VISO
Ratings
TF541S-A 400 400 500 500 5.0 7.8 80 2.0 10 5.0 5.0 0.5 - 40 to +125 - 40 to +125 1500 TF561S-A 600 600 700 700
Unit
V V V V A A A A V V W W C C V
Conditions
Tj= -40 to +125C, RGK =470
50Hz Half-cycle sinewave, Continuous current, Tc=88C 50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125C f f f 50Hz, duty 50Hz 50Hz, duty 10% 10%
50Hz Sine wave, RMS, Terminal to Case, 1 min.
sElectrical Characteristics
Parameter
Off-state current Reverse current On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance
Symbol
IDRM IRRM VTM VGT IGT VGD IH dv/dt tq Rth
Ratings
min typ max 2.0 2.0 1.4 1.5 0.03 0.1 4.0 20 30 4.0 0.2
Unit
mA mA V V mA V mA V/S S C/W
Conditions
Tj=125C, VD=VDRM(VRRM), RGK=1k TC=25C, ITM=10A VD=6V, RL=10, TC=25C VD=1/2 x VDRM, Tj=125C, RGK=1k RGK=1k, Tj=25C VD=1/2 x VDRM, Tj=125C, RGK=1k, CGK=0.033F Tc=25C Junction to case
20


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